absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 20 i d @ v gs = 12v, t c = 100c continuous drain current 12.5 i dm pulsed drain current ? 80 p d @ t c = 25c max. power dissipation 75 w linear derating factor 0.6 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 65 mj i ar avalanche current ? 20 a e ar repetitive avalanche energy ? 7.5 mj dv/dt p eak diode recovery dv/dt ? 7.7 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5s) weight 1.0(typical) g pre-irradiation international rectifier?s r5 tm technology provides high performance power mosfets for space appli- cations. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paral- leling and temperature stability of electrical param- eters. o c a radiation hardened IRHNJ57133SE power mosfet surface mount (smd-0.5) 10/03/01 www.irf.com 1 130v, n-channel technology smd-0.5 product summary part number radiation level r ds(on) i d IRHNJ57133SE 100k rads (si) 0.08 ? 20a features: single event effect (see) hardened ultra low r ds(on) low total gate charge proton tolerant simple drive requirements ease of paralleling hermetically sealed surface mount ceramic package light weight for footnotes refer to the last page pd - 94294b
IRHNJ57133SE pre-irradiation 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 130 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.16 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.08 ? v gs = 12v, i d = 12.5a resistance v gs(th) gate threshold voltage 2.5 ? 4.5 v v ds = v gs , i d = 1.0ma g fs forward transconductance 8.0 ? ? s ( ) v ds > 15v, i ds = 12.5a ? i dss zero gate voltage drain current ? ? 10 v ds = 104v ,v gs =0v ? ? 25 v ds = 104v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 40 v gs =12v, i d = 20a q gs gate-to-source charge ? ? 16 nc v ds = 65v q gd gate-to-drain (?miller?) charge ? ? 18 t d (on) turn-on delay time ? ? 20 v dd = 65v, i d = 20a, t r rise time ? ? 100 v gs =12v, r g = 7.5 ? t d (off) turn-off delay time ? ? 35 t f fall time ? ? 40 l s + l d total inductance ? 4.0 ? c iss input capacitance ? 970 ? v gs = 0v, v ds = 25v c oss output capacitance ? 300 ? pf f = 1.0mhz c rss reverse transfer capacitance ? 20 ? na ? ? nh ns a thermal resistance parameter min typ max units test conditions r thjc junction-to-case ? ? 1.67 r thj-pcb junction-to-pc board ? 6.6 ? soldered to a 2? square copper-clad board c/w measured from the center of drain pad to center of source pad source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) ? ? 20 i sm pulse source current (body diode) ? ?? 80 v sd diode forward voltage ? ? 1.2 v t j = 25c, i s = 20a, v gs = 0v ? t rr reverse recovery time ? ? 250 ns t j = 25c, i f = 20a, di/dt 100a/ s q rr reverse recovery charge ? ? 1.5 cv dd 25v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a note: corresponding spice and saber models are available on the g&s website. for footnotes refer to the last page
www.irf.com 3 IRHNJ57133SE table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics fig a. single event effect, safe operating area international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page parameter 100k rads (si) units test conditions min max bv dss drain-to-source breakdown voltage 130 ? v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward ? 100 na v gs = 20v i gss gate-to-source leakage reverse ? -100 v gs = -20v i dss zero gate voltage drain current ? 10 a v ds =104v, v gs =0v r ds(on) static drain-to-source on-state resistance (to-3) ? 0.08 ? v gs = 12v, i d = 12.5a r ds(on) static drain-to-source v sd diode forward voltage ? 1.2 v v gs = 0v, i d = 20a on-state resistance (smd-0.5) ? 0.08 ? v gs = 12v, i d = 12.5a ion let energy range v ds (v) mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs =-5v @v gs =-10v @v gs =-15v @v gs =-20v br 36.7 309 39.5 130 130 130 130 130 i 59.8 341 32.5 130 130 130 100 50 au 82.3 350 28.4 130 120 30 ? ? 0 30 60 90 120 150 -20 -15 -10 -5 0 vgs vds br i au table 2. single event effect safe operating area
IRHNJ57133SE pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 0.01 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.01 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 20a 0.1 1 10 100 5 7 9 11 13 15 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j
www.irf.com 5 IRHNJ57133SE fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage pre-irradiation 1 10 100 0 500 1000 1500 2000 2500 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c rss c iss c oss 0 8 16 24 32 40 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 20a v = 26v ds v = 65v ds v = 104v ds 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , drain-to-source current (a) tc = 25 c tj = 150 c single pulse 1ms 10ms operation in this area limited by r ds (on) 100s
IRHNJ57133SE pre-irradiation 6 www.irf.com fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. v gs + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectan g ular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 4 8 12 16 20 t , case temperature ( c) i , drain current (a) c d
www.irf.com 7 IRHNJ57133SE q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 12 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs pre-irradiation . 25 50 75 100 125 150 0 25 50 75 100 125 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 9.0a 12.6a 20a
IRHNJ57133SE pre-irradiation 8 www.irf.com ? pulse width 300 s; duty cycle 2% ? total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v ds bias. 104 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. ? repetitive rating; pulse width limited by maximum junction temperature. ? v dd = 50v, starting t j = 25 c, l= 0.3 mh peak i l = 20a, v gs = 12v ? i sd 20a, di/dt 365a/ s, v dd 130v, t j 150 c footnotes: case outline and dimensions ? smd-0.5 pad assignments ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 10/01
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